NX8349TS Datasheet, PDF (6/10 Pages) Renesas Technology Corp – LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

NX8349TS,NX8349YK,NX8349XK
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Temperature
Operating Case Temperature
Forward Current of LD
Reverse Voltage of LD
Forward Current of PD
Reverse Voltage of PD
Soldering Temperature
(Flexible Printed Circuit)
Optical Output Power
Symbol
Tstg
TC
IFLD
VRLD
IFPD
VRPD
Tsld
Pf
Chapter Title
Ratings
Unit
40 to +95
C
5 to +95
C
120
mA
2
V
10
mA
15
V
350 (10 sec.)
C
5
mW
R08DS0002EJ0100 Rev.1.00
Jul 26, 2010
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