 English |
|
|
|
|
|
|
|
| NX8349TS Datasheet, PDF (1/10 Pages) Renesas Technology Corp – LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |||
| |||
|
Preliminary
NX8349TS,NX8349YK,NX8349XK
LASER DIODE
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Data Sheet
R08DS0002EJ0100
Rev.1.00
Jul 26, 2010
DESCRIPTION
The NX8349TS, NX8349YK, NX8349XK are 1 310 nm Multiple Quantum Wells (MQW) structured Distributed
Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle
type package designed for SFP+/XFP transceiver.
FEATURES
ï· Internal optical isolator
ï· Optical output power
ï· Low threshold current
ï· Wide operating temperature range
ï· InGaAs monitor PIN-PD
Pf = ï3 dBm
Ith = 8 mA TYP. @ TC = 25ï°C
TC = ï5 to +95ï°C
APPLICATIONS
ï· 10 G BASE-LW/LR
ï· 10 G Fibre Channel
R08DS0002EJ0100 Rev.1.00
Jul 26, 2010
Page 1 of 9
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese