NE5550234 Datasheet, PDF (4/15 Pages) Renesas Technology Corp – Silicon Power MOS FET

NE5550234
A Business Partner of Renesas Electronics Corporation.
TYPICAL CHARACTERISTICS 1 (T_A = 25°C)
RF: f = 460MHz, V_DS = 3.6/4.5/6/7.5/9 V, I_Dset = 40 mA, P_in = –15 to 20 dBm
IM: f1 = 460MHz, f2 = 461 MHz, V_DS = 3.6/4.5/6/7.5/9 V, I_Dset = 40mA, P_out (2 tone) = 6 to 28 dBm
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
40
Pout - 3.6 V
0.8
Pout - 4.5 V
Pout - 7.5 V
35
Pout - 9 V
0.7
Pout - 6 V
IDS - 3.6 V
IDS - 4.5 V
30
IDS - 7.5 V
0.6
IDS - 9 V
IDS - 6 V
25
0.5
POWER GAIN, POWER ADDED
EFFICIENCY vs. INPUT POWER
40
80
Gp - 3.6 V
Gp - 4.5 V
Gp - 7.5 V
35
Gp - 9 V
70
Gp - 6 V
η _{add - 3.6 V}
30
η add - 4.5 V
60
η add - 7.5 V
η add - 9 V
η _{add - 6 V}
25
50
20
0.4
20
40
15
0.3
15
30
10
0.2
10
20
5
0.1
0
0.0
–20 –15 –10 –5 0 5 10 15 20 25
Input Power Pin (dBm)
5
10
0
–20 –15 –10 –5
0
5 10 15 20 25 ⁰
Input Power Pin (dBm)
2f0, 3f0 vs. OUTPUT POWER
0
2f0 - 3.6 V
2f0 - 4.5 V
2f0 - 7.5 V
–10
2f0 - 9 V
3f0 - 3.6 V
3f0 - 4.5 V
3f0 - 7.5V
–20
3f0 - 9 V
2f0 - 6 V
3f0 - 6 V
–30
IM3/IM5 vs. 2 TONES OUTPUT POWER
0
IM3 - 3.6 V
IM3 - 4.5 V
IM3 - 7.5 V
–10
IM3 - 9 V
IM5 - 3.6 V
IM5 - 4.5 V
IM5 - 7.5 V
–20
IM5 - 9 V
IM3 - 6 V
IM5 - 6 V
–30
–40
–40
–50
–50
–60
–60
–70
0
5 10 15 20 25 30 35 40
Output Power Pout (dBm)
Remark The graphs indicate nominal characteristics.
–70
0
5
10 15 20 25 30
2 Tones Output Power Pout (2 tone) (dBm)
R09DS0039EJ0300 Rev.3.00
Mar 12, 2013
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