NE5550234 Datasheet, PDF (1/15 Pages) Renesas Technology Corp – Silicon Power MOS FET

A Business Partner of Renesas Electronics Corporation.
NE5550234
Silicon Power MOS FET
Data Sheet
R09DS0039EJ0300
Rev.3.00
Mar 12, 2013
FEATURES
• High Output Power
: P_out = 33.0 dBm TYP. (V_DS = 7.5 V, I_Dset = 40 mA, f = 460 MHz, P_in = 15 dBm)
• High power added efficiency : η_add = 68% TYP. (V_DS = 7.5 V, I_Dset = 40 mA, f = 460 MHz, P_in = 15 dBm)
• High Linear gain
: G_L = 23.5 dB TYP. (V_DS = 7.5 V, I_Dset = 40 mA, f = 460 MHz, P_in = 0 dBm)
• High ESD tolerance
• Suitable for VHF to UHF-BAND Class-AB power amplifier.
APPLICATIONS
• 150 MHz Band Radio System
• 460 MHz Band Radio System
• 900 MHz Band Radio System
ORDERING INFORMATION
Part Number
Order Number
Package Marking
Supplying Form
NE5550234
NE5550234-T1
NE5550234-AZ
NE5550234-T1-AZ
3-pin
power
minimold
(34 PKG)
(Pb-Free)
V5 • 12 mm wide embossed taping
• Gate pin faces the perforation side of the tape
• 12 mm wide embossed taping
• Gate pin faces the perforation side of the tape
• Qty 1 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5550234-AZ
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C, unless otherwise specified)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
(50% Duty Pulsed)
Total Power Dissipation ^Note
Channel Temperature
Storage Temperature
Note: Value at T_C = 25°C
Symbol
V_DS
V_GS
I _DS
I_DS-pulse
P_tot
T_ch
T_stg
Ratings
30
6.0
0.6
1.2
12.5
150
−65 to +150
Unit
V
V
A
A
W
°C
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0039EJ0300 Rev.3.00
Mar 12, 2013
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