2SC4227 Datasheet, PDF (4/6 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

INSERTION POWER GAIN
vs. FREQUENCY
25
VCE = 3 V
IC = 7 mA
20
15
10
5
0
0.1 0.2
0.5
1
2
5
Frequency f (GHz)
NOISE FIGURE vs.
COLLECTOR CURRENT
5
VCE = 3 V
f = 1 GHz
4
3
2
1
0
0.5 1
5 10
50
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
NE68130 / 2SC4227
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
15 _{VCE = 3 V}
f = 1 GHz
10
5
0
0.5 1
5 10
50
Collector Current IC (mA)
4
Data Sheet PU10451EJ01V0DS