2SC4227 Datasheet, PDF (2/6 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Symbol
Test Conditions
ICBO VCB = 10 V, IE = 0 mA
IEBO VEB = 1 V, IC = 0 mA
hFE ^{Note 1} VCE = 3 V, IC = 7 mA
fT
VCE = 3 V, IC = 7 mA
⏐S21e⏐² VCE = 3 V, IC = 7 mA, f = 1 GHz
NF VCE = 3 V, IC = 7 mA, f = 1 GHz
Cre ^{Note 2} VCB = 3 V, IE = 0 mA, f = 1 MHz
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
Marking
hFE Value
R33
R33
40 to 90
R34
R34
70 to 150
R35
R35
110 to 240
NE68130 / 2SC4227
MIN. TYP. MAX. Unit
−
−
0.8
μA
−
−
0.8
μA
40
−
240
−
4.5
7.0
–
GHz
10
12
−
dB
−
1.4
2.7
dB
−
0.45
0.9
pF
2
Data Sheet PU10451EJ01V0DS