NE651R479A Datasheet, PDF (2/11 Pages) NEC – 0.4 W L-BAND POWER GaAs HJ-FET

NE651R479A
TYPICAL 3.5 V RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TC = 25°C)
SYMBOLS
CHARACTERISTICS
UNITS MIN
TYP
MAX
TEST CONDITIONS
POUT
GL
ηADD
Output Power
Linear Gain¹
Power Added Efficiency
dBm
dB
%
27.0
14.0
60
f = 900 MHz, VDS =3.5 V
PIN = +13 dBm, RG = 1 k Ω,
IDSQ = 50 mA (RF OFF)
ID
Drain Current
mA
230
ABSOLUTE MAXIMUM RATINGS¹ (TA = 25 °C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VDS
Drain to Source Voltage
V
8
VGS
Gate to Source Voltage
V
-4
IDS
Drain Current
A
1.0
IGF
Gate Forward Current
mA
10
IGR
Gate Reverse Current
mA
10
PT
Total Power Dissipation²
W
2.5
TCH
Channel Temperature
°C
150
TSTG
Storage Temperature
°C -65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on a 50 x 50 x 1.6 mm double copper clad epoxy glass
PWB. TA = +85°C
RECOMMENDED OPERATING LIMITS
SYMBOL
PARAMETER
VDS Drain to Source Voltage
GCOMP Gain Compression¹
TCH Channel Temperature
UNITS MIN TYP MAX
V
3.5 6.0
dB
3.0
°C
+125
Note:
1. Recommended maximum gain compression is 3.0 dB at
VDS = 4.2 to 5.5 V.
ORDERING INFORMATION
PART NUMBER
QTY
NE651R479A-T1-A
NE651R479A-A
1 kpcs/Reel
Bulk, 100 Pcs. Min.
Note:
1. Embossed Tape, 12 mm wide.