NE651R479A Datasheet, PDF (1/11 Pages) NEC – 0.4 W L-BAND POWER GaAs HJ-FET

NEC's 1 W, L&S-BAND
MEDIUM POWER GaAs HJ-FET
NE651R479A
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE
Available on Tape and Reel
• USABLE TO 3.7 GHz:
Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
PCS
• HIGH OUTPUT POWER:
30 dBm TYP with 5.0 V Vdc
27 dBm TYP with 3.5 V Vdc
• HIGH LINEAR GAIN:
12 dB TYP at 1.9 GHz
• LOW THERMAL RESISTANCE:
30°C/W
DESCRIPTION
NEC's NE651R479A is a GaAs HJ-FET designed for medium
power mobile communications, Fixed Wireless Access, ISM,
WLL, PCS, IMT-2000, and MMDS transmitter and subscriber
applications. It is capable of delivering 0.5 Watts of output
power (CW) at 3.5 V, and 1 Watt of output power (CW) at 5 V
with high linear gain, high efficiency, and excellent linearity.
Reliability and performance uniformity are assured by NEC's
stringent quality and control procedures.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 79A
4.2 Max
Source
Gate
Drain
Gate
1.5 ± 0.2
Source
Drain
0.4 ± 0.15
5.7 Max
0.8 Max
3.6 ± 0.2
(Bottom View)
TYPICAL 5 V RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TC = 25°C)
SYMBOLS
CHARACTERISTICS
UNITS MIN
TYP
MAX
TEST CONDITIONS
POUT
GL
ηADD
Output Power
Linear Gain¹
Power Added Efficiency
dBm
dB
%
29.5
12.0
58
f = 1.9 GHz, VDS = 5 V
PIN = +15 dBm, RG = 1 k Ω,
IDSQ = 50 mA (RF OFF)
ID
Drain Current
mA
350
Note:
1. PIN = 0 dBm.
ELECTRICAL CHARACTERISTICS (TC = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
CHARACTERISTICS
UNITS
POUT
Output Power
dBm
GL
Linear Gain¹
dB
ηADD
Power Added Efficiency
%
ID
Drain Current
mA
IDSS
Saturated Drain Current
A
VP
Pinch-Off Voltage
V
BVGD
Gate to Drain Break Down Voltage
V
RTH
Thermal Resistance, Channel to Case
°C/W
Notes:
1. PIN = 0 dBm.
2. DC performance is 100% tested. Wafers are sample tested for RF performance.
Wafer rejection criteria for standard devices is 1 reject for sample lot.
NE651R479A
79A
MIN
TYP
MAX
26.0
27.0
12.0
52
60
220
0.7
-2.0
-0.4
12
30
50
TEST CONDITIONS
f = 1.9 GHz, VDS =3.5 V
PIN = +15 dBm, RG = 1 k Ω,
IDSQ = 50 mA (RF OFF)²
VDS = 2.5 V, VGS = 0 V
VDS = 2.5 V, ID = 14 mA
IGD = 14 mA
California Eastern Laboratories