2SC5336 Datasheet, PDF (2/7 Pages) NEC – NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

NE856M02 / 2SC5336
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
Reverse Transfer Capacitance
Symbol
Test Conditions
ICBO VCB = 10 V, IE = 0 mA
IEBO VBE = 1 V, IC = 0 mA
hFE ^{Note 1} VCE = 10 V, IC = 20 mA
fT
VCE = 10 V, IC = 20 mA
⏐S21e⏐² VCE = 10 V, IC = 20 mA, f = 1 GHz
NF VCE = 10 V, IC = 7 mA, f = 1 GHz
NF VCE = 10 V, IC = 40 mA, f = 1 GHz
Cre ^{Note 2} VCB = 10 V, IE = 0 mA, f = 1 MHz
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
Marking
hFE Value
RH
RH
50 to 100
RF
RF
80 to 160
RE
RE
125 to 250
MIN. TYP. MAX. Unit
–
–
1.0
μA
–
–
1.0
μA
50
120
250
–
–
6.5
–
GHz
–
12
–
dB
–
1.1
–
dB
–
1.8
3.0
dB
–
0.5
0.8
pF
2
Data Sheet P10938EJ2V0DS