2SC5336 Datasheet, PDF (1/7 Pages) NEC – NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

DATA SHEET
NPN SILICON RF TRANSISTOR
NE856M02
/
2SC5336
JEITA
Part No.
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
4-PIN POWER MINIMOLD
FEATURES
• High gain: S21e² = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
• 4-pin power minimold package with improved gain from the NE85634 / 2SC3357
ORDERING INFORMATION
Part Number
NE856M02-AZ
2SC5336-AZ
NE856M02-AZ
2SC5336-T1-AZ
Quantity
25 pcs (Non reel)
1 kpcs/reel
Supplying Form
• Magazine case
• 12 mm wide embossed taping
• Collector face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
Total Power Dissipation
IC
100
mA
P Note
tot
1.2
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Mounted on 16 cm² × 0.7 mm (t) ceramic substrate (Copper plating)
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Document No. P10938EJ2V0DS00 (2nd edition)
Date Published August 2001 NS CP(K)
The mark • shows major revised points.