2SC4095 Datasheet, PDF (2/6 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free Air
200
100
0
50
100
150
TA-Ambient Temperature-°C
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 6 V
100
50
20
10
0.5 1
5
10
50
IC-Collector Current-mA
GAIN BANDWIDTH PRODUUT vs.
COLLECTOR CURRENT
30
VCE = 6 V
20
10
5
2
1
2
5
10
20 30
IC-Collector Current-mA
2
NE68039 / 2SC4095
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
1.0
f = 1.0 GHz
0.5
1
0.2
0.1
0.06
1
2
5
10
20
VCB-Collector to Base Voltage-V
18
16
14
12
10
8
6
4
2
0
0.2
INSERTION GAIN vs.
COLLECTOR CURRENT
VCE = 6 V
f = 1.0 GHz
f = 2.0 GHz
0.5 1
2
5 10
IC-Collector Current-mA
20 30
MAXIMUM AVAILABLE GAIN, INSERTION
GAIN vs. FREQUENCY
30
VCE = 6 V
fC = 10 mA
MAG
20
|S21e|²
10
0
0.1
0.2
0.5
1.0
2.0 3.0
f-Frequency-GHz