2SC4095 Datasheet, PDF (1/6 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
NE68039
/
2SC4095 JEITA
Part No.
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DESCRIPTION
The NE68039 / 2SC4095 is an NPN epitaxial silicon transistor
designed for use in low-noise and small signal amplifiers from VHF
band to UHF band. NE68039 / 2SC4095 features excellent power
gain with very low-noise figures. NE68039 / 2SC4095 employs
direct nitiride passivated base surface process (DNP process) which is
a proprietary new fabrication technique which provides excellent noise
figures at high current values. This allows excellent associated gain
and very wide dynamic range.
FEATURES
• NF = 1.8 dB TYP. @ f = 2.0 GHz, VCE = 6 V, IC = 5 mA
•
S21e
² = 9.5 dB TYP. @ f = 2.0 GHz, VCE = 6 V, IC = 10 mA
PACKAGE DIMENSIONS
(Units: mm)
2.8
+0.2
−0.3
1.5
+0.2
−0.1
5°
5°
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
20
V
10
V
1.5
V
35
mA
200
mW
150
C
65 to +150 C
ELECTRICAL CHARACTERISTICS (TA = 25
C)
CHARACTERISTIC
SYMBOL MIN. TYP. MAX.
UNIT
5°
5°
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
TEST CONDITIONS
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
1.0

A VCB = 10 V, IE = 0
1.0

A VEB = 1 V, IC = 0
DC Current Gain
hFE
50
100
250
VCE = 6 V, IC = 10 mA
Gain Bandwidth Product
fT
10
GHz VCE = 6 V, IC = 10 mA f = 1.0 GHz
Feed-Back Capacitance
Insertion Power Gain
Cre
0.25
0.8

S21e
²
7.5
9.5
pF VCB = 10 V, IE = 0, f = 1.0 MHz
dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz
Maximum Available Gain
MAG
12
dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz
Noise Figure
NF
1.8
3.0
dB VCE = 6 V, IC = 5 mA, f = 2.0 GHz
hFE Classification
Class
R46/RDF *
R47/RDG *
R48/RDH *
Marking
R46
R47
R48
hFE
50 to 100
80 to 160
125 to 250 * Old Specification / New Specification
Document No. P10367EJ2V1DS00 (2nd edition)
Date Published March 1997 N