2SC4094 Datasheet, PDF (2/5 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free air
200
100
0
50
100
150
TA-Ambient Temperature-°C
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 8 V
100
50
20
100.5
1
5
10
50
IC-Collector Current-mA
GAIN BANDWIDTH PRODUT vs.
30
COLLECTOR CURRENT
VCE = 8 V
20
10
7
5
3
2
1
23
5 7 10
20 30
IC-Collector Current-mA
2
NE68139 / 2SC4094
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
2.0
f = 1.0 GHz
1.0
0.7
0.5
0.3
0.2
0.1 ₁
20
2
3
5 7 10
20
VCB-Collector to Base Voltage-V
INSERTION GAIN vs.
COLLECTOR CURRENT
VCE = 8 V
f = 1.0 GHz
10
0
1
2
5
10 20
40
IC-Collector Current-mA
MAXIMUM AVAILABLE GAIN, INSERTION
GAIN vs. FREQUENCY
30
MAG
VCE = 8 V
IC = 20 mA
20
|S21e|²
10
00.1
0.2
0.5
1.0
2.0
f-Frequency-GHz