2SC4094 Datasheet, PDF (1/5 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
NE68139
/
2SC4094 JEITA
Part No.
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DESCRIPTION
The NE68139 / 2SC4094 is an NPN epitaxial silicon transistor
designed for use in low-noise and small signal amplifiers from VHF band
to UHF band. Low-noise figure, high gain, and high current capability
achieve a very wide dynamic range and excellent linearity. This
achieved by direct nitride passivated base surface process (DNP
process) which is a proprietary new fabrication technique.
PACKAGE DIMENSIONS
(Units: mm)
2.8
+0.2
−0.3
1.5
+0.2
−0.1
FEATURES
• NF = 1.2 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 7 mA
•
S21e
² = 15 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 20 mA
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
65
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150 C
5°
5°
5°
5°
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
ELECTRICAL CHARACTERISTICS (TA = 25
C)
CHARACTERISTIC
SYMBOL MIN. TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
1.0

A VCB = 10 V, IE = 0
1.0

A VEB = 1 V, IC = 0
DC Current Gain
hFE
50
250
VCE = 8V, IC = 20 mA
Gain Bandwidth Product
fT
9
GHz VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Feed-Back Capacitance
Insertion Power Gain
Cre
0.25
0.8

S21e
²
13
15
pF VCB = 10 V, IE = 0, f = 1.0 MHz
dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Maximum Available Gain
MAG
17
dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Noise Figure
NF
1.2
2.0
dB VCE = 8 V, IC = 7 mA, f = 1.0 GHz
hFE Classification
Class
R36/RCF *
R37/RCG *
R38/RCH *
Marking
R36
R37
R38
hFE
50 to 100
80 to 160
125 to 250 * Old Specification / New Specification
Document No. P10366EJ1V1DS00 (1st edition)
Date Published March 1997 N