2SC4093 Datasheet, PDF (2/6 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

NE85639 / 2SC4093
ELECTRICAL CHARACTERISTICS (TA = +25C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Symbol
Test Conditions
ICBO VCB = 10 V, IE = 0 mA
IEBO VEB = 1 V, IC = 0 mA
hFE ^{Note 1} VCE = 10 V, IC = 20 mA
fT
VCE = 10 V, IC = 20 mA
S21e² VCE = 10 V, IC = 20 mA, f = 1.0 GHz
NF VCE = 10 V, IC = 7 mA, f = 1.0 GHz
Cre ^{Note 2} VCB = 10 V, IE = 0 mA, f = 1.0 MHz
Notes 1. Pulse measurement: PW  350 s, Duty Cycle  2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
Marking
Range
R26/RBF ^Note R27/RBG ^Note R28/RBH ^Note
R26
R27
R28
50 to 100
80 to 160
125 to 250
Note Old Specification / New Specification
MIN. TYP. MAX. Unit


1.0
A


1.0
A
50
120
250


7.0
–
GHz
11
13

dB

1.1
2.0
dB

0.6
0.95
pF
2
Data Sheet PU10519EJ01V0DS