2SC4093 Datasheet, PDF (1/6 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

NPN SILICON RF TRANSISTOR
NE85639
/
2SC4093 JEITA
Part No.
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
4-PIN MINIMOLD
DESCRIPTION
The NE85639 / 2SC4093 is a NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and
CATV band.
It has large dynamic range and good current characteristics, and is contained in a 4-pin minimold package which
enables high-isolation gain.
FEATURES
• Low Noise
NF = 1.1 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
• High Power gain
S21e² = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
• Maximum available power gain: MAG = 14.2 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
• 4-pin minimold Package
ORDERING INFORMATION
Part Number
NE85639-A
2SC4093-A
NE85639-T1-A
2SC4093-T1-A
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Ptot ^Note
Tj
Tstg
Ratings
20
12
3.0
100
200
150
65 to +150
Unit
V
V
V
mA
mW
C
C
Note Free air
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10519EJ01V0DS (1st edition)
(Previous No. P10365EJ3V1DS00)
Date Published October 2004 CP(K)
The mark  shows major revised points.