NESG2101M05 Datasheet, PDF (14/15 Pages) NEC – NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

NESG2101M05
NONLINEAR MODEL
SCHEMATIC
CCBPKG
LBPKG
LB
Base
CCB
Q1
LCPKG
CCE
Collector
LE
CCEPKG
CBEPKG
LEPKG
Emitter
BJT NONLINEAR MODEL PARAMETERS⁽¹⁾
Parameters
Q1
Parameters
Q1
IS
3.64e-15
BF
309.7
NF
1.079
VAF
56
IKF
233.9
ISE
11.67e-15
NE
1.648
BR
20.01
NR
1.080
VAR
2.782
IKR
54.57e-3
ISC
1.024e-18
NC
1.35
RE
1.6
RB
2.2
RBM
0.05
IRB
1e-4
RC
4.8
CJE
1.461e-12
VJE
0.798
MJE
0.137
CJC
489.9e-15
VJC
0.605
(1) Gummel-Poon Model
MJC
XCJC
CJS
VJS
MJS
FC
TF
XTF
VTF
ITF
PTF
TR
EG
XTB
XTI
KF
AF
0.149
1
0
0.75
0
0.8
4e-12
10
5
0.5
20
0
1.11
1.3
5.2
0
1
ADDITIONAL PARAMETERS
Parameters
NESG2101M05
CCB
0.01 pF
CCE
0.2 pF
LB
0.16 nH
LE
0.17 nH
CCBPKG
0.45 pF
CCEPKG
0.02 pF
CBEPKG
0.05 pF
LBPKG
0.8 nH
LCPKG
1.2 nH
LEPKG
0.15 nH
MODEL TEST CONDITIONS
Frequency: 0.1 to 6 GHz
Bias:
VCE = 2 V, IC = 5 mA to 40 mA
Date:
09/2003
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
05/11/2005
A Business Partner of NEC Compound Semiconductor Devices, Ltd.