UPG2314T5N_V1 Datasheet, PDF (1/10 Pages) California Eastern Labs – POWER AMPLIFIER FOR BluetoothTM Class 1

GaAs HBT INTEGRATED CIRCUIT
PG2314T5N
POWER AMPLIFIER FOR Bluetooth^TM Class 1
DESCRIPTION
The PG2314T5N is GaAs HBT MMIC for power amplifier which was developed for Bluetooth Class 1.
This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed
in a 6-pin plastic TSON (Thin Small Out-line Non-leaded) package. And this package is able to high-density surface
mounting.
FEATURES
• Operation frequency
: fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.)
• Supply voltage
: VCC1, 2 = 2.7 to 3.6 V (3.0 V TYP.)
ended ^{• Control voltage}
: Vcont = 0 to 3.6 V (3.0 V TYP.)
: Vbias + Venable = 0 to 3.1 V (3.0 V TYP.)
• Circuit current
: ICC = 65 mA TYP. @ VCC1, 2 = 3.0 V, Vbias + Venable = 3.0 V, Vcont = 3.0 V,
Pin = 0 dBm
• Output power
: Pout = +20 dBm TYP. @ VCC1, 2 = 3.0 V, Vbias + Venable = 3.0 V, Vcont = 3.0 V,
m _{Pin = 0 dBm}
ot ^{Recom esign • Gaincontrolrange}
: GCR = 23 dB TYP. @ VCC1, 2 = 3.0 V, Vbias + Venable = 3.0 V, Vcont = 0 to 3.0 V,
Pin = 0 dBm
• High efficiency
: PAE = 50% TYP.
• High-density surface mounting : 6-pin plastic TSON package (1.5  1.5  0.37 mm)
D _APPLICATIONS
N ^{ew • Power Amplifier for Bluetooth Class 1}
For ^{N ORDERING INFORMATION}
Part Number
Order Number
Package
Marking
Supplying Form
PG2314T5N-E2 PG2314T5N-E2-A 6-pin plastic TSON
G5D  Embossed tape 8 mm wide
(Pb-Free)
 Pin 1, 6 face the perforation side of the tape
 Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: PG2314T5N-A
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PG10624EJ02V0DS (2nd edition)
Date Published February 2008 NS
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.