NE552R479A Datasheet, PDF (1/9 Pages) California Eastern Labs – NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET

NEC's 3.0 V, 0.25 W L&S-BAND
MEDIUM POWER SILICON LD-MOSFET
NE552R479A
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE
• HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V
• HIGH LINEAR GAIN: 11 dB TYP @ 2.45 GHz
• SINGLE SUPPLY: 2.8 to 6 V
• SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 79A
(Bottom View)
4.2 MAX.
1.5±0.2
Source
Source
Gate
Drain
Gate
Drain
0.4±0.15
5.7 MAX.
0.8 MAX.
3.6±0.2
DESCRIPTION
NEC's NE552R479A is an N-Channel silicon power laterally
diffused MOSFET specially designed as the transmission
power amplifier for mobile and fixed wireless applications.
Die are manufactured using NEC's NEWMOS2 technology
(NEC's 0.6 μm WSi gate lateral MOSFET) and housed in a
surface mount package.
APPLICATIONS
• DIGITAL CELLULAR PHONES:
3.0 V GSM1900 Pre Driver
• ANALOG CELLULAR PHONES:
2.4 V AMPS Handsets
• OTHERS:
W-LAN
Short Range Wireless
Retail Business Radio
Special Mobile Radio
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
POUT
GL
ηADD
ID
IGSS
IDSS
VTH
gm
BVDSS
RTH
PART NUMBER
PACKAGE OUTLINE
CHARACTERISTICS
Output Power
Linear Gain
Power Added Efficiency
Drain Current
Gate-to-Source Leakage Current
Saturated Drain Current
(Zero Gate Voltage Drain Voltage)
Gate Threshold Voltage
Transconductance
Drain-to-Source Breakdown Voltage
Thermal Resistance
UNITS
dBm
dB
%
A
nA
nA
V
S
V
°C/W
NE552R479A
79A
MIN
TYP
MAX
24.0
26.0
11.0
35
45
230
100
100
1
1.4
1.9
0.4
15
18
10
TEST CONDITIONS
f = 2.45 GHz, VDS = 3.0 V,
IDSQ = 200 mA (RF OFF)
Pin = 19 dBm, except
Pin = 10 dBm for linear gain
VGS = 5.0 V
VDS = 6.0 V
VDS = 3.5 V, IDS = 1 mA
VDS = 3.5 V, IDS = 100 mA
IDSS = 10 μA
Channel-to-Case
Notes:
1. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1
reject for several samples.
California Eastern Laboratories