MC-7831-HA Datasheet, PDF (1/3 Pages) California Eastern Labs – NECs 1 GHz GaAs CATV 18 dB PUSH-PULL AMPLIFIER

MC-7831-HA
NEC's 1 GHz GaAs CATV
18 dB PUSH-PULL AMPLIFIER
FEATURES
• SPECIFIED FOR INCREASED BANDWIDTH TO 1 GHz
• GaAs ACTIVE DEVICES
• LOW DISTORTION
• HIGH LINEAR GAIN:
MC-7831-HA - GL = 18 dB MIN at f = 870 MHz
• LOW RETURN LOSS
• LOW GAIN CHANGE OVER TEMPERATURE
• SPECIFIED FOR 79, 110, and 132 CHANNELS
PERFORMANCE
• HIGH RELIABILITY AND RUGGEDNESS:
Withstands environmental extremes as well as Silicon
devices (Surge, ESD, Etc.)
DESCRIPTION
NEC's MC-7831-HA is a GaAs Multi-Chip Module designed
for use as input stages in CATV applications up to 1 GHz. Be-
cause this unit is a GaAs device, it has low distortion, low noise
figure, and low return loss across the entire frequency band.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE H02
3.2 MAX
14.85 MAX
8.1 MAX
45.08 MAX
38.1±0.25
27.5 MAX
19.05±0.38
25.4±0.25
2.54±0.25
12 3 5 789
4.25
+ 0.25
- 0.35
4.0±0.25
6-32 unc 2B
21.5 MAX
VDD
5
1
9
In
Out
2 378
0.51±0.050
Gnd
10.75±0.25
4.19±0.13
A
0.38.. A
6.3 _2.5
±0.05
2.54±0.38
Like the previous generation of products, these devices sur-
vive such hazards as surge and ESD as well as their silicon
competitors, but deliver superior performance with low DC
current required.
APPLICATIONS
• CATV HEADEND SYSTEMS
All devices are assembled and tested using fully automated
equipment to maximize consistency in part to part perfor-
mance, and reliability is assured by NEC's stringent quality
and process control procedures. These parts come in industry
compatible hybrid packages.
• CATV OPTICAL NODES
• CATV DISTRIBUTION AMPS
ELECTRICAL CHARACTERISTICS (TA = 30±5 °C, VDD = 24 V, ZS = ZL = 75 Ω)
SYMBOLS
PART NUMBER
CHARACTERISTICS
UNITS
MC-7831-HA
MIN
TYP
MAX
TEST CONDITIONS
BW
Frequency Range
GL
Linear Gain
S
Gain Slope
Gf₁
Gain Flatness 1
Gf₂
Gain Flatness 2
NF
Noise Figure 1
Noise Figure 2
RLin
Input Return Loss
RLout
Output Return Loss
MHz
50
–
1000
dB
18.0
–
21.0
f = 870 MHz
dB
0.2
–
1.0
f = 40 to 870 MHz
dB
-0.35
–
+0.35 40 to 870 MHz
dB
-0.35
–
+0.85 40 to 1000 MHz
dB
–
–
6.5
f = 50 MHz
–
–
7.0
f = 870 MHz
dB
20.0
–
–
40 to 160MHz
19.0
–
–
160 to 320 MHz
17.5
–
–
320 to 640 MHz
16.0
–
–
640 to 870 MHz
10.0
–
–
870 to 1000 MHz
dB
20.0
–
–
40 to 160MHz
19.0
–
–
160 to 320 MHz
17.5
–
–
320 to 640 MHz
16.0
–
–
640 to 870 MHz
12.0
–
–
870 to 1000 MHz
(Continued on next page)
California Eastern Laboratories