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| CNL635 Datasheet, PDF (2/5 Pages) Continental Device India Limited – SILICON PLANAR EPITAXIAL TRANSISTORS | |||
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SILICON PLANAR EPITAXIAL TRANSISTORS
CNL635
CNL637
CNL639
CPL636
CPL638
CPL640
NPN
PNP
TO-92
CB E
Plastic Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Otherwise Specified)
DESCRIPTION
SYMBOL
TEST CONDITION
VCE=2V, IC=5mA
VCE=2V, IC=150mA
DC Current Gain
*hFE
CNL635, CPL636
CNL637, CPL638
CNL639, CPL640
VCE=2V, IC=500mA
VALUE
>25
40 - 250
40 - 160
40 - 160
>25
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transition Frequency
VBE=0.5V, IC=0, f=1MHz
Cib
NPN
PNP
VCB=10V, IC=0, f=1MHz
Cob
NPN
PNP
IC=50mA, VCE=2V,
fT
f=100MHz
NPN
PNP
typ 50
typ 110
typ 7
typ 9
typ 200
typ 150
* Pulse Test: Pulse Width < 300µs; Duty Cycle < 2%
UNIT
pF
pF
MHz
CNL635_40 Rev_1 020505D
Continental Device India Limited
Data Sheet
Page 2 of 5
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