CNL635 Datasheet, PDF (1/5 Pages) Continental Device India Limited – SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
CNL635
CNL637
CNL639
CPL636
CPL638
CPL640
NPN
PNP
CB ^E
Suitable for Driver Stage of Audio Amplifier
TO-92
Plastic Package
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC Unless Otherwise Specified)
DESCRIPTION
SYMBOL
CNL635
CPL636
CNL637
CPL638
Collector Emitter Voltage
V_CEO
45
60
Collector Base Voltage
V_CBO
45
60
Emitter Base Voltage
V_EBO
5
Collector Current Continuous
I_C
1
Collector Current Peak
I_CM
1.5
Base Current Continuous
I_B
100
Base Current Peak
I_BM
200
Power Dissipation @ T_a=25ºC
P_D
0.8
Power Dissipation @ T_a=25ºC
*P_D
1.0
Power Dissipation @ T_c=25ºC
P_D
2.0
Operating And Storage Junction
Temperature Range
T_j, T_stg
-55 to +150
CNL639
CPL640
80
100
UNIT
V
V
V
A
A
mA
mA
W
W
W
ºC
*Transistors mounted on printed circuit board. Lead Length 4mm, mounting pad for collector lead min
10mm x 10 mm, copper
ELECTRICAL CHARACTERISTICS (T_a=25ºC Unless Otherwise Specified)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
CNL635, CPL636
CNL637, CPL638
CNL639, CPL640
Collector Base Voltage
V_CBO
I_C=100µA, I_E=0
CNL635, CPL636
CNL637, CPL638
CNL639, CPL640
Emitter Base Voltage
V_EBO
I_E=10µA, I_C=0
Collector Cut-off Current
I_CBO
V_CB=30V, I_E = 0
V_CB=30V, I_E = 0, T_a=125^oC
Base Emitter On Voltage
*V_{BE (on)}
V_CE=2V, I_C = 500mA
Collector Emitter Saturation Voltage
*V_CE(sat)
I_C=500mA, I_B=50mA
VALUE
>45
>60
>80
>45
>60
>100
>5
<100
<10
<1
<0.5
UNIT
V
V
V
nA
µA
V
V
CNL635_40 Rev_1 020505D
Continental Device India Limited
Data Sheet
Page 1 of 5