CN454 Datasheet, PDF (2/5 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CN454 / CN455
TO-92
Plastic Package
E^BC
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
DC Current Gain
*h_FE
V_CE=10V, I_C=150mA
V_CE=1V, I_C=200mA
V_CE=10V, I_C=1A
DYNAMIC CHARACTERISTICS
DESCRIPTION
Transition Frequency
Output Capacitance
SYMBOL
f_T
C_obo
TEST CONDITION
V_CE=10V, I_C=50mA,
f=100MHz
V_CB=10V, I_E=0, f=1MHz
*Pulse Condition: Pulse Width = 300µs, Duty Cycle < 2%.
CN454_455Rev_3 211204E
CN454
100 - 300
>30
TYP10
CN454
>100
<15
CN455
100 - 300
-
TYP10
UNITS
CN455
>100
<15
UNITS
MHz
pF
Continental Device India Limited
Data Sheet
Page 2 of 5