CN454 Datasheet, PDF (1/5 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CN454 / CN455
TO-92
Plastic Package
EBC
General Purpose Transistors designed for Small and Medium Signal Amplification
from D.C to Radio Frequencies
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Peak Pulse Current
Collector Current Continuous
Base Current
Power Dissipation @ T_a=25ºC
Derate Above 25ºC
Power Dissipation @ T_a=25ºC
Power Dissipation @ T_C=25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
I_B
P_D
**P_D
P_D
T_j, T_stg
CN454
140
120
5
2
1
200
0.9
7.2
1.1
2.2
CN455
160
140
- 65 to +150
Thermal Resistance
Junction to Ambient
Junction to Ambient
Junction to Case
R_{th (j-a) 1}
R_{th (j-a) 2+}
R_{th (j-c)}
138.8
113.6
56.8
UNITS
V
V
V
A
A
mA
W
mW/ºC
W
W
ºC
ºC/W
ºC/W
ºC/W
* Consult safe operating area graph for conditions.
**Transistors mounted on printed circuit board. Lead Length 4mm, mounting pad for collector lead min
10mm x 10 mm, copper
2+ Device mounted on P.C.B with copper equal to 1sq.inch. Minimum
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Cut Off Current
I_CBO
V_CB=120V, I_E = 0
V_CB=140V, I_E = 0
Emitter Cut Off Current
I_EBO
V_EB=4V, I_C = 0
Collector Emitter Saturation Voltage V_{CE (sat)}
I_C=150mA, I_B=15mA
I_C=200mA, I_B=20mA
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
CN454
<100
<100
<0.7
<1.0
>120
CN455
<100
<100
<0.7
>140
UNITS
nA
nA
nA
V
V
V
CN454_455Rev_3 211204E
Continental Device India Limited
Data Sheet
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