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| CMBT5551 Datasheet, PDF (2/3 Pages) Continental Device India Limited – SILICON NPN HIGH-VOLTAGE TRANSISTOR | |||
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CMBT5551
Collector current
Total power dissipation up to Tamb = 25 °C
Junction temperature
Storage temperature range
IC
max.
600 mA
Ptot
max
250 mW
Tj
max.
150 ° C
Tstg
â55 to +150 ° C
THERMAL RESISTANCE
from junction to ambient
Rth jâa
500 K/W
CHARACTERISTICS (at TA = 25°C unless otherwise specified)
Collector cutâoff current
IE = 0; VCB = 120 V
IE = 0; VCB = 120 V; Tamb = 100 °C
Emitter cutâoff current
ICBO
ICBO
IC = 0; VEB = 4 V
Breakdown voltages
IEBO
IC = 1 mA; IB = 0
IC = 100 µA; IE = 0
IC = 0; IE = 10 µA
Saturation voltages
V(BR)CEO
V(BR)CBO
V(BR)EBO
IC = 10 mA; IB = 1 mA
IC = 50 mA; IB = 5 mA
D.C. current gain
VCEsat
VBEsat
VCEsat
VBEsat
IC = 1 mA; VCE = 5 V
hFE
IC = 10 mA; VCE = 5 V
hFE
IC = 50 mA; VCE = 5 V
hFE
Smallâsignal current gain
IC = 1 mA; VCE = 10 V; f = 1 kHz
hfe
Output capacitance at f = 1 MHz
IE = 0; VCB = 10 V
Co
Input capacitance at f = 1 MHz
IC = 0; VEB = 0.5 V
Ci
Transition frequency at f = 100 MHz
IC = 10 mA; VCE = 10 V
fT
max.
max.
max.
min.
min.
min.
max.
max.
max.
max.
min.
min.
max.
min.
min.
max.
max.
max.
min.
max.
50 nA
50 µA
50 nA
160 V
180 V
6V
0.15 V
1V
0.2 V
1V
80
80
250
30
50
200
6 pF
30 pF
100 MHz
300 MHz
Continental Device India Limited
Data Sheet
Page 2 of 3
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