CMBT5551 Datasheet, PDF (1/3 Pages) Continental Device India Limited – SILICON NPN HIGH-VOLTAGE TRANSISTOR

Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
SOT-23 Formed SMD Package
CMBT5551
SILICON N–P–N HIGH–VOLTAGE TRANSISTOR
N–P–N transistor
Marking
CMBT5551 = G1
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Collector current
Total power dissipation up to T_amb = 25 °C
Junction temperature
Collector–emitter saturation voltage
I_C = 50 mA; I_B = 5 mA
D.C. current gain
I_C = 10 mA; V_CE = 5 V
V_CBO
V_CEO
I_C
P_tot
T_j
V_CEsat
h_FE
RATINGS (at T_A = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
V_CBO
V_CEO
V_EBO
max.
max.
max.
max
max.
max.
min.
max.
max.
max.
180 V
160 V
600 mA
250 mW
150 ° C
0.2 V
80
180 V
160 V
6V
Continental Device India Limited
Data Sheet
Page 1 of 3