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| CMBT5550 Datasheet, PDF (2/3 Pages) Continental Device India Limited – SILICON N-P-N HIGH-VOLTAGE TRANSISTOR | |||
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CMBT5550
Total power dissipation up to Tamb = 25°C
Storage temperature
Junction temperature
Ptot
max
250 mW
Tstg
â55 to +150 ° C
Tj
max.
150 ° C
THERMAL RESISTANCE
from junction to ambient
Rth jâa
500 K/W
CHARACTERISTICS (at TA = 25°C unless otherwise specified)
Collector cutâoff current
IE = 0; VCB = 100 V
IE = 0; VCB = 100 V; Tamb = 100 °C
Emitter cutâoff current
ICBO
ICBO
IC = 0; VEB = 4.0 V
Breakdown voltages
IEBO
IC = 1 mA; IB = 0
IC = 10 µA; IE = 0
IC = 0; IE = 10 µA
Saturation voltages
IC = 10 mA; IB = 1 mA
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
IC = 50 mA; IB = 5 mA
VCEsat
VBEsat
D.C. current gain
IC = 1 mA; VCE = 5 V
hFE
IC = 10 mA; VCE = 5 V
hFE
IC = 50 mA; VCE = 5 V
hFE
Output capacitance at f = 1 MHz
IE = 0; VCB = 10 V
Co
Input capacitance at f = 1 MHz
IC = 0; VEB = 10 V
Ci
Transition frequency at f = 100 MHz
IC = 10 mA; VCE = 10 V; Tamb = 25 °C
fT
max.
max.
max.
min.
min.
min.
max.
max.
max.
max.
min.
min.
max.
min.
max.
max.
min.
max.
100 nA
100 mA
50 nA
140 V
160 V
6V
0.15 V
1V
0.25 V
1.2 V
60
60
250
20
6 pF
30 pF
100 MHz
300 MHz
Continental Device India Limited
Data Sheet
Page 2 of 3
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