CMBT5550 Datasheet, PDF (1/3 Pages) Continental Device India Limited – SILICON N-P-N HIGH-VOLTAGE TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBT5550
SILICON N–P–N HIGH–VOLTAGE TRANSISTOR
N–P–N transistor
Marking
CMBT5550 = 1F
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Collector current
Total power dissipation up to T_amb = 25°C
Collector–emitter saturation voltage
I_C = 50 mA; I_B = 5 mA
D.C. current gain
I_C = 10 mA; V_CE = 5 V
V_CBO
V_CEO
I_C
P_tot
V_CEsat
h_FE
RATINGS (at T_A = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current
V_CBO
V_CEO
V_EBO
I_C
max.
max.
max.
max
160 V
140 V
600 mA
250 mW
max.
0.25 V
60 to 250
max.
max.
max.
max.
160 V
140 V
6V
600 mA
Continental Device India Limited
Data Sheet
Page 1 of 3