CMBT5087 Datasheet, PDF (2/3 Pages) Continental Device India Limited – SILICON PLANAR EPITAXIAL TRANSISTORS

CMBT5087
Emitter-base voltage (open collector)
Collector current (d.c.)
Total power dissipation at T_amb = 25°C
Storage temperature
Junction temperature
V_EBO
I_C
P_tot*
T_stg
T_j
max.
3V
max. 50 mA
max. 225 mW
-55 to +150 ° C
max. 150 ° C
THERMAL RESISTANCE
From junction to ambient
R_{th j–a}
417 ° / W
CHARACTERISTICS (at T_A = 25°C unless otherwise specified)
Collector cut-off current
I_E = 0; V_CB = 10 V
I_CBO
I_E = 0; V_CB = 35 V
max.
max.
10 nA
50 nA
Breakdown voltages
I_C = 1 mA; I_B = 0
I_C = 100 µA; I_E = 0
V_CEO
V_CBO
min.
min.
50 V
50 V
Saturation voltage
I_C = 10 mA; I_B = 1.0 mA
I_C = 10 mA; I_B = 1.0 mA
V_CEsat max. 300 mV
V_BEsat max. 0.85 V
D.C. current gain
I_C = 100 µA; V_CE = 5 V
I_C = 1 mA; V_CE = 5 V
I_C = 10 mA; V_CE = 5 V
h_FE
min. 250
max. 800
min. 250
min. 250
Collector capacitance at f = 100 KHz
I_E = 0; V_CB = 5 V
C_ob
max. 4.0 pF
Transition frequency at f = 20 MHz
I_C = 500 µA; V_CE = 5 V
f_T
min.
40 MHz
Small signal current
IC = 1 mA; VCE = 5 V; f = 1 KHz
h_fe
min. 250
max. 900
Noise figure
I_C = 20 µA; V_CE = 5 V; R_S = 10 kΩ
f = 10 Hz to 15.7 KHz
I_C = 100 µA; V_CE = 5 V; R_S = 3.0 kΩ; f = 1.0 KHz
N_F
max. 2.0 dB
N_F
max. 2.0 dB
*FR-5 Board = 1.0 × 0.75 × 0.62 in.
Continental Device India Limited
Data Sheet
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