CMBT5087 Datasheet, PDF (1/3 Pages) Continental Device India Limited – SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBT5087
SILICON PLANAR EPITAXIAL TRANSISTORS
PNP transistor
Marking
CMBT5087= 2Q
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
Total power dissipation at T_amb = 25°C
Junction temperature
D.C. current gain
–I_C = 100 µA; V_CE = 5 V
Transition frequency at f = 20 MHz
I_C = 500 µA; V_CE = 5 V
RATINGS (at T_A = 25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
*FR-5 Board = 1.0 × 0.75 × 0.062 in.
V_CBO
V_CEO
V_EBO
I_C
P_tot*
T_j
max.
max.
max.
max.
max.
max.
50 V
50 V
3V
50 mA
225 mW
150 ° C
h_FE
min. 250
max. 800
f_T
min. 40 MHz
V_CBO
V_CEO
max.
max.
50 V
50 V
Continental Device India Limited
Data Sheet
Page 1 of 3