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| CMBT4401 Datasheet, PDF (2/3 Pages) Continental Device India Limited – SILICON PLANAR EPITAXIAL TRANSISTOR | |||
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CMBT4401
THERMAL RESISTANCE
From junction to ambient
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified
Collectorâemitter breakdown voltage
IC = 1.0 mA; IB = 0
Collectorâbase breakdown voltage
IC = 100 µA; IE = 0
Emitterâbase breakdown voltage
IE = 100 µA; IC = 0
Base cutâoff current
VCE = 35 V; VEB = 0.4 V
Collector cutâoff current
VCE = 35 V; VEB = 0.4 V
D.C. current gain
IC = 0.1 mA; VCE = 1 V
IC = 1.0 mA; VCE = 1 V
IC = 10 mA; VCE = 1 V
IC = 150 mA; VCE = 1 V
IC = 500 mA; VCE = 2 V
Saturation voltage
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
Transition frequency
f = 100 MHz; IC = 20 mA; VCE = 10 V
Collectorâbase capacitance
IE = 0; VCB = 5 V; f = 100 kHz
Emitterâbase capacitance
IC = 0; VBE = 0.5 V; f = 100 kHz
Input impedance; f = 1 kHz;
IC = 1 mA; VCE = 10 V
Voltage feedâback ratio
IC = 1 mA; VCE = 10 V; f = 1 kHz
Smallâsignal curent gain; f = 1 kHz;
IC = 1 mA; VCE = 10 V
Rth jâa =
500 K/W
V(BR)CEO >
V(BR)CBO >
V(BR)EBO >
IBEX
<
ICEX
<
40 V
60 V
6V
0.1 µA
0.1 µA
hFE
>
20
hFE
>
40
hFE
>
80
hFE
100 to 300
hFE
>
40
VCEsat
VBEsat
VCEsat
VBEsat
<
0.4 V
0.75 to 0.95 V
<
0.75 V
<
1.2 V
fT
>
250 MHz
Ccb
<
8 pF
C eb
<
30 pF
hie
min.
max.
1 kâ¦
8 kâ¦
hre
min. 0.1 Ã 10â4
max. 30 Ã 10â4
hfe
min.
40
max.
500
Continental Device India Limited
Data Sheet
Page 2 of 3
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