CMBT4401 Datasheet, PDF (1/3 Pages) Continental Device India Limited – SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBT4401
SILICON PLANAR EPITAXIAL TRANSISTOR
N–P–N transistor
Marking
CMBT4401 = 2X
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage
Collector current (DC)
DC current gain
I_C = 150 mA; V_CE = 1 V
Total power dissipation up to T_amb = 25 °C
V_CEO
I_C
h_FE
P_tot
RATINGS (at T_A = 25°C unless otherwise specified)
Limiting values
Collector–emitter voltage
Collector–base voltage
Emitter–base voltage
Collector current (DC)
Total power dissipation up to T_amb = 25°C
Storage temperature range
Junction temperature
V_CEO
V_CBO
V_EBO
I_C
P_tot
T_stg
T_j
max.
max.
min.
max.
max
40 V
600 mA
100
300
250 mW
max.
40 V
max.
60 V
max.
6V
max.
600 mA
max
250 mW
–55 to +150 ° C
max.
150 ° C
Continental Device India Limited
Data Sheet
Page 1 of 3