CMBT3906 Datasheet, PDF (2/3 Pages) Continental Device India Limited – SILICON EPITAXIAL TRANSISTOR

RATINGS
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation
up to T_amb = 25 °C
Storage temperature
THERMAL CHARACTERISTICS
T_j = P(R_{th j–t} + R_{th t–s} + R_{th s–a}) + T_amb
Thermal resistance
from junction to ambient
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified
Collector–emitter breakdown voltage
–I_C = 1 mA; l_B = 0
Collector–base breakdown voltage
–I_C = 10µA; I_E = 0
Emitter–base breakdown voltage
—I_E = 10 µA; I_C = 0
Collector cut–off current
–V_CE = 30 V; –V_EB = 3 V
Base current
with reverse biased emitter junction
Output capacitance at f = 100 kHz
I_E = 0; –V_CB = 5 V
Input capacitance at f = 100 kHz
I_C = 0; –V_BE = 0,5 V
Saturation voltages
–I_C = 10 mA; –I_B = 1 mA
–I_C = 50 mA; –l_B = 5 mA
–I_C = 10 mA; –I_B = 1 mA
–I_C = 50 mA; –l_B = 5 mA
D.C. current gain
–I_C = 0,1 mA; –V_CE = 1 V
–I_C = 1 mA; –V_CE = 1 V
–I_C = 10 mA; –V_CE = 1 V
CMBT3906
–V_CB0
–V_CE0
–V_EB0
–I_C
P_tot
T_stg
max.
max.
max.
max.
40 V
40 V
5V
200 mA
max. 250 mW
–55 to +150 °C
R_{th j–a}
=
500 K/W
–V_(BR)CE0 min. 40 V
–V_(BR)CB0 min. 40 V
–V_(BR)EB0 min.
5V
–I_CEX
max. 50 nA
–I_BEX
max, 50 nA
C_c
max, 4,5 pF
C_e
max. 10 pF
–V_CEsat
–V_CEsat
–V_BEsat
–V_BEsat
max. 0,25 V
max. 0,4 V
max. 0,85 V
min. 0,65 V
max. 0,95 V
h_FE
min. 60
h_FE
min. 80
h_FE
min. 100
max. 300
Continental Device India Limited
Data Sheet
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