CMBT3906 Datasheet, PDF (1/3 Pages) Continental Device India Limited – SILICON EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
SOT-23 Formed SMD Package
CMBT3906
SILICON EPITAXIAL TRANSISTOR
P–N–P transistor
Marking
CMBT3906 = 2A
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation up to T_amb = 25 °C
D.C. current gain
–I_C = 10 mA; –V_CE = 1 V
Transition frequency at f = 100 MHz
–I_C = 10 mA; –V_CE = 20 V
–V_CB0
–V_CE0
–V_EB0
–I_C
P_tot
h_FE
f_T
max.
max.
max.
max.
max.
40 V
40 V
5V
200 mA
250 mW
100 to 300
min. 250 MHz
Continental Device India Limited
Data Sheet
Page 1 of 3