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| CMBD4150 Datasheet, PDF (2/3 Pages) Continental Device India Limited – SILICON PLANAR EPITAXIAL HIGH SPEED DIODE | |||
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CMBD4150
THERMAL RESISTANCE
From junction to ambient
Rth jâa
CHARACTERISTICS (at TA = 25 °C, unless otherwise specified)
Continuous reverse voltage
VR
max.
Repetitive peak reverse voltage
VRRM
max.
Forward current (d.c.)
IF
max.
Repetitive peak forward current
IFRM
max.
Nonârepetitive peak forward current
T = 1 µsec
T = 1 sec
Diode capacitance
IFSM
IFSM
max.
max.
VR = 0; f = 1 MHz
Forward voltage
IF = 1 mA
CD
max.
VF
min.
max.
IF = 10 mA
VF
min.
max.
IF = 50 mA
VF
min.
max.
IF = 100 mA
VF
min.
max.
IF = 200 mA
VF
min.
max.
Reverse breakdown voltage
IR = 100 mA
VBR
Reverse voltage leakage current
VR = 50 V
IR
Reverse current
VR = 50 V; Tj = 150 °C
IR
Forward recovery voltage
when switched to IF = 10 mA; tP = 20 nsec.
VFR
Reverse recovery time
IF = IR = 10 â 200 mAdc, RL = 100 â¦
trr
IF = IR = 200 â 400 mAdc, RL = 100 â¦
trr
min
max.
max.
max.
max.
max.
500 K/W
50 V
75 V
300 mA
600 mA
4A
0.5 A
2.5 pF
540 mV
620 mV
660 mV
740 mV
760 mV
860 mV
820 mV
920 mV
870 mV
1V
75 V
100 nA
100 µA
1.75 V
4 ns
6 ns
Continental Device India Limited
Data Sheet
Page 2 of 3
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