CMBD4150 Datasheet, PDF (1/3 Pages) Continental Device India Limited – SILICON PLANAR EPITAXIAL HIGH SPEED DIODE

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBD4150
SILICON PLANAR EPITAXIAL HIGH SPEED DIODE
Marking
CMBD4150 = D18
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = ANODE
2 = NC
3 = CATHODE
2
1
3
ABSOLUTE MAXIMUM RATINGS
Continuous reverse voltage
Repetitive peak reverse voltage
Repetitive peak forward current
Junction temperature
Peak forward surge current
T = 1 µsec.
T = 1 sec.
Reverse recovery time when switched from
I_F = 400 mA to I_R = 400 mA; R_L = 100 Ω
measured at I_R = 4 mA
V_R
V_RRM
I_FRM
T_j
I_FSM
I_FSM
T_rr
RATINGS (at T_A = 25 °C, unless otherwise specified)
Storage Temperature
T_stg
max.
max.
max.
max.
max.
50 V
75 V
600 mA
150 ° C
4A
0.5 A
max.
6 ns
–55 to +150 ° C
Continental Device India Limited
Data Sheet
Page 1 of 3