CC5551 Datasheet, PDF (2/4 Pages) Continental Device India Limited – NPN COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR

NPN COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR
CC5551
(9AW)
TO-92
BCE
ELECTRICAL CHARACTERISTICS (Ta=25°C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Dynamic Characteristics
Small Signal Current Gain
h_fe
I_C=1mA, V_CE=10V
80
f=1KHz
Transition Frequency
f_t
V_CE=10V,I_C=10mA,
100
f=100MHz
Output Capacitance
C_ob V_CB=10V, I_E=0
-
f=1MHz
Input Capacitance
C_ib
V_EB=0.5V, I_C=0
-
f=1MHz
Noise Figure
N_F
V_CE=5V, I_C=250µA
-
R_S=1kΩ, f=10Hz to
15.7kHz
*Pulse Test: Pulse Width=300us, Duty Cycle=2%
CC5551
TYP
-
-
-
-
-
MAX
320
300
6.0
20
8.0
UNIT
MHz
pF
pF
dB
Continental Device India Limited
Data Sheet
Page 2 of 4