CC5551 Datasheet, PDF (1/4 Pages) Continental Device India Limited – NPN COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR

Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR
IS/ISO 9002
Lic# QSC/L- 000019.2
CC5551
(9AW)
TO-92
BCE
MARKING : NCC
5551
High Voltage NPN Transistor for General Purpose and Telephony Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
Collector -Emitter Voltage
V_CEO
160
Collector -Base Voltage
V_CBO
180
Emitter -Base Voltage
V_EBO
6.0
Collector Current Continuous
I_C
600
Power Dissipation @Ta=25°C
P_D
625
Derate Above 25°C
5.0
Power Dissipation @Tc=25°C
P_D
1.5
Derate Above 25°C
12
Junction Temperature
T_j
Storage Temperature
T_stg
THERMAL RESISTANCE
150
-55 to +150
Junction to Case
R_th(j-c)
125
Junction to Ambient
R_{th(j-a) (1)}
357
(1) R_th(j-a) is measured with the device soldered into a typical printed circuit board
ELECTRICAL CHARACTERISTICS (Ta=25°C unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector-Cut off Current
V_CEO I_C=1mA,I_B=0
160
V_CBO I_C=100µA.I_E=0
180
V_EBO I_E=10µA, I_C=-0
6.0
I_CBO V_CB=160V, I_E=0
-
TYP
-
-
-
-
MAX
-
-
-
50
T_a=100°C
V_CB=160V, I_E=0
-
-
50
Emitter-Cut off Current
I_EBO V_EB=4V, I_C=0
-
-
50
DC Current Gain
h_FE* I_C=1mA,V_CE=5V
80
-
-
I_C=10mA,V_CE=5V
80
-
320
I_C=50mA,V_CE=5V
30
-
-
Collector Emitter Saturation Voltage V_{CE(Sat) *} I_C=10mA,I_B=1mA
-
-
0.15
I_C=50mA,I_B=5mA
-
-
0.2
Base Emitter Saturation Voltage
V_{BE(Sat) *} I_C=10mA,I_B=1mA
-
-
1.0
I_C=50mA,I_B=5mA
-
-
1.0
UNIT
V
V
V
mA
mW
mw/°C
W
mw/°C
°C
°C
°C/W
°C/W
UNIT
V
V
V
nA
µA
nA
V
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 4