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| BC856W Datasheet, PDF (2/4 Pages) NXP Semiconductors – PNP general purpose transistors | |||
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PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC856W , 857W, 858W
SOT-323
Formed SMD Package
ELECTRICAL CHARACTERISTICS (Tamb=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
DC Current Gain
hFE
IC=2mA, VCE=5V
BC856W
BC857W,BC858W
BC856AW,BC857AW
BC856BW,BC857BW
BC857CW
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter On Voltage
VCE(Sat)
VBE(Sat)
VBE (on)
IC=10mA, IB=0.5mA
*IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
*IC=100mA, IB=5mA
IC=2mA, VCE=5V
IC=10mA, VCE=5V
Collector Capacitance
Cc
IE=ie=0, VCB=10V, f=1MHz
Emitter Capacitance
Ce
IC=ic=0, VEB=0.5V, f=1MHz
Transition Frequency
fT
IC=10mA, VCE=5V, f=100MHz
Noise Figure
**Pulse test tp=300µs, δ < 0.02
NF
IC=0.2mA, VCE=5V
Rs=2kâ¦, f=1KHz, B=200Hz
MIN TYP MAX UNITS
125
475
125
800
125
250
220
475
420
800
0.30
0.60
0.70
0.85
0.60
0.75
0.82
3.0
12
100
10
V
V
V
V
V
V
pF
pF
MHz
dB
BC856W_BC858W Rev170210E
Continental Device India Limited
Data Sheet
Page 2 of 4
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