BC856W Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP general purpose transistors

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC856W , 857W, 858W
SOT-323
Formed SMD Package
Marking
BC856W =3D
BC856AW =3A
BC856BW =3B
BC857W =3H
BC857AW =3E
BC857BW =3F
BC857CW =3G
BC858W =3M
General Purpose Switching and Amplification.
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL BC856W
Collector Base Voltage
Collector Emitter Voltage
V_CBO
80
V_CEO
65
Emitter Base Voltage
V_EBO
5
Collector Current (DC)
I_C
Peak Collector Current
I_CM
Peak Base Current
I_BM
Power Dissipation upto T_amb=25ºC
*P_tot
Storage Temperature
T_stg
Junction Temperature
T_j
Operating Ambient Temperature
T_amb
BC857W
50
45
5
100
200
200
200
- 65 to +150
150
- 65 to +150
BC858W
30
30
5
UNITS
V
V
V
mA
mA
mA
mW
ºC
ºC
ºC
THERMAL RESISTANCE
From junction to ambient
*R_{th (j-a)}
625
K/W
*Sot-323 standard mounting condition
ELECTRICAL CHARACTERISTICS (T_amb=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Cut Off Current
I_CBO
V_CB=30V, I_E=0
V_CB=30V, I_E=0, T_j=150 ºC
Emitter Cut Off Current
I_EBO
V_EB=5V, I_C=0
MIN TYP MAX UNITS
15
nA
4
µA
100 nA
BC856W_BC858W Rev170210E
Continental Device India Limited
Data Sheet
Page 1 of 4