BC846W Datasheet, PDF (2/4 Pages) NXP Semiconductors – NPN general purpose transistors

NPN SILICON PLANAR EPITAXIAL TRANSISTORS
NPN
BC846W , 847W, 848W
SOT-323
Formed SMD Package
ELECTRICAL CHARACTERISTICS (T_amb=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
DC Current Gain
h_FE
I_C=2mA, V_CE=5V
BC846W
BC847W,BC848W
BC846AW,BC847AW
BC846BW,BC847BW
BC847CW
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
V_{CE (sat)}
V_{BE (sat)}
I_C=10mA, I_B=0.5mA
*I_C=100mA, I_B=5mA
I_C=10mA, I_B=0.5mA
*I_C=100mA, I_B=5mA
Base Emitter On Voltage
V_{BE (on)}
I_C=2mA, V_CE=5V
Collector Capacitance
I_C=10mA, V_CE=5V
C_c
I_E=ie=0, V_CB=10V, f=1MHz
Transition Frequency
Noise Figure
**Pulse test t_p=300µs, δ < 0.02
f_T
I_C=10mA, V_CE=5V,f=100MHz
NF
I_C=0.2mA, V_CE=5V
R_s=2kΩ, f=1KHz, B=200Hz
MIN TYP MAX UNITS
110
450
110
800
110
220
200
450
520
800
0.25
0.60
0.7
0.9
0.58
0.70
0.77
3.0
100
10
V
V
V
V
V
V
pF
MHz
dB
BC846W_BC848W Rev170210E
Continental Device India Limited
Data Sheet
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