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BC846W Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN general purpose transistors
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
NPN
BC846W , 847W, 848W
SOT-323
Formed SMD Package
Marking
BC846W =1D
BC846AW =1A
BC846BW =1B
BC847W =1H
BC847AW =1E
BC847BW =1F
BC847CW =1G
BC848W =1M
General Purpose Switching and Amplification.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL BC846W
Collector Base Voltage
Collector Emitter Voltage
VCBO
80
VCEO
65
Emitter Base Voltage
VEBO
6
Collector Current (DC)
IC
Peak Collector Current
ICM
Peak Base Current
IBM
Power Dissipation Tamb=25ºC
*Ptot
Storage Temperature
Tstg
Junction Temperature
Tj
Operating Ambient Temperature
Tamb
THERMAL RESISTANCE
From junction to ambient
*Rth (j-a)
BC847W
50
45
6
100
200
200
200
- 65 to +150
150
- 65 to +150
625
BC848W
30
30
5
UNITS
V
V
V
mA
mA
mA
mW
ºC
ºC
ºC
K/W
*Transistor mounted on an FR4 printed circuit board
ELECTRICAL CHARACTERISTICS (Tamb=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Collector Cut Off Current
ICBO
VCB=30V, IE=0
VCB=30V, IE=0, Tj=150 ºC
Emitter Cut Off Current
DC Current Gain
IEBO
VEB=5V, IC=0
hFE
IC=10µA, VCE=5V
BC846AW, BC847AW
BC846BW, BC847BW,BC848BW
BC847CW
TYP
90
150
270
MAX
15
5
100
UNITS
nA
µA
nA
BC846W_BC848W Rev170210E
Continental Device India Limited
Data Sheet
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