BC317 Datasheet, PDF (2/5 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTOR

NPN SILICON PLANAR EPITAXIAL TRANSISTOR
BC317/A/B
TO-92
Plastic Package
EBC
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DYNAMIC CHARACTERISTICS
DESCRIPTION
Noise Figure
Output Capacitance
Input Capacitance
Transition Frequency
Voltage Feedback Ratio
Input Impedance
Output Admittance
Small Signal Current Gain
SYMBOL TEST CONDITION
MIN
I_C=200µA, V_CE=5V,
NF
R_S=2kΩ, f=1KHz,
BW=200Hz
C_ob
V_CB=10V, I_E=0,f=1MHz
C_ib
V_EB=0.5V, I_C=0,f=1MHz
f_T
I_C=10mA, V_CE=5V
h_re
I_C=2mA, V_CE=5V, f=1KHz
h_ie
I_C=2mA, V_CE=5V, f=1KHz
h_oe
I_C=2mA, V_CE=5V, f=1KHz
h_fe
I_C=2mA, V_CE=5V, f=1KHz
BC317 125
BC317A 125
BC317B 240
TYP
11.5
280
2
5
20
BC317_A_B_Rev220103E
MAX
6
4
500
260
500
UNITS
dB
pF
pF
MHz
x10 ^-4
kΩ
µmhos
Continental Device India Limited
Data Sheet
Page 2 of 5