BC317 Datasheet, PDF (1/5 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
BC317/A/B
TO-92
Plastic Package
EBC
Amplifier Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Power Dissipation @ T_a=25ºC
Derate Above 25ºC
Power Dissipation @ T_c=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
P_D
P_D
T_j, T_stg
VALUE
45
50
6.0
150
350
2.8
1.0
8.0
- 55 to +150
THERMAL CHARACTERISTICS
Junction to Case
R_{th (j-c)}
125
Junction to Ambient in free air
R_{th (j-a)}
357
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
Collector Emitter Voltage
V_CES
I_C=100µA, V_BE=0
Collector Base Voltage
V_CBO
I_C=100µA, I_E=0
Emitter Base Voltage
V_EBO
I_E=100µA, I_C=0
Collector Cut off Current
I_CBO
V_CB=20V, I_E = 0
Emitter Cut off Current
I_EBO
V_EB=4V, I_C = 0
Base Emitter On Voltage
V_{BE (on)}
I_C=2mA, V_CE=5V
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
V_{CE (sat)}
V_{BE (sat)}
h_FE
I_C=10mA, V_CE=5V
I_C=100mA, I_B=5mA
I_C=10mA, I_B=0.5mA
I_C=100mA, I_B=5mA
I_C=10µA, V_CE=5V
BC317A
BC317B
I_C=2mA, V_CE=5V
BC317
BC317A
BC317B
MIN
45
50
50
6.0
0.57
40
110
110
200
TYP
0.70
0.85
90
MAX
30
15
0.72
0.77
0.60
450
220
450
BC317_A_B_Rev220103E
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
ºC/W
ºC/W
UNITS
V
V
V
V
nA
nA
V
V
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 5