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| 2N6034 Datasheet, PDF (2/4 Pages) STMicroelectronics – MIDIUM POWER DAR;OMGTONS | |||
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SILICON POWER DARLINGTON TRANSISTORS
(PNP) 2N6034, 2N6035, 2N6036
(NPN) 2N6037, 2N6038, 2N6039
TO126
Plastic Package
ECB
DESCRIPTION
SYMBOL TEST CONDITION
MIN
2N6034,2N6037
ICEX
VCE=40V,VBE(off)=1.5V
2N6035, 2N6038
VCE=60V,VBE(off)=1.5V
2N6036, 2N6039
VCE=80V,VBE(off)=1.5V
TYP
MAX
100
100
100
UNIT
µA
µA
µA
2N6034,2N6037
2N6035, 2N6038
2N6036, 2N6039
Tc=125OC
VCE=40V,VBE(off)=1.5V
VCE=60V,VBE(off)=1.5V
VCE=80V,VBE(off)=1.5V
Collector cut off Current
2N6034,2N6037
ICBO
VCB=40, IE=0
2N6035, 2N6038
VCB=60, IE=0
2N6036, 2N6039
VCB=80, IE=0
Emitter Cut off Current
IEBO
VBE=5V,IC=0
DC Current Gain
hFE
IC=0.5A, VCE=3V
500
IC=2A, VCE=3V
750
IC=4A, VCE=3V
100
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
VCE(Sat)
VBE(sat)
IC=2A,IB=8mA
IC=4A,IB=40mA
IC=4A,IB=40mA
Base Emitter on Voltage
VBE(on) IC=2A,IB=VCE=3V
Dynamic Characteristics
Small Signal Current Gain
l hfe l IC=0.75A,VCE=10V
25
f=1MHz
Output Capacitance
Cob
VCB=10V, IE=0,
PNP
f=0.1MHz
NPN
500 µA
500 µA
500 µA
0.5 mÎ
0.5 mÎ
0.5 mÎ
2.0 mA
15000
2.0
V
3.0
V
4.0
V
2.8
V
200 pF
100 pF
Continental Device India Limited
Data Sheet
Page 2 of 4
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