2N6034 Datasheet, PDF (1/4 Pages) STMicroelectronics – MIDIUM POWER DAR;OMGTONS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON POWER DARLINGTON TRANSISTORS
(PNP) 2N6034, 2N6035, 2N6036
(NPN) 2N6037, 2N6038, 2N6039
TO126
Plastic Package
ECB
Designed for General -Purpose Amplifier & Low Speed Switching Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current (Peak Value)
Base Current
Total Power Dissipation @ Tc=25ºC
Derate above 25^oC
Total Power Dissipation @ Ta=25ºC
Derate above 25^oC
V_CBO
V_CEO
V_EBO
I_C
I_B
P_D
P_D
2n6034 2N6035 2N6036
2n6037 2N6038 2N6039
40
60 80
40
60 80
5.0
4.0
8.0
100
40
0.32
1.5
0.012
UNIT
V
V
V
A
A
mA
W
W/ºC
W
W/ºC
Operating And Storage Junction
Temperature Range
T_j, T_stg
-65 to +150
ºC
THERMAL RESISTANCE
Junction to ambient
Junction to case
R_th(j-a)
R_th(j-c)
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter (sus) Voltage
2N6034,2N6037
V_CEO(sus)
I_C=100mA, I_B=0
2N6035, 2N6038
2N6036, 2N6039
83.3
ºC/W
3.12
ºC/W
MIN TYP MAX UNIT
40
V
60
V
80
V
Collector Cut off Current
2N6034,2N6037
I_CEO
V_CE=40V, I_B=0
2N6035, 2N6038
V_CE=60V, I_B=0
2N6036, 2N6039
V_CE=80V, I_B=0
100 µA
100 µA
100 µA
Continental Device India Limited
Data Sheet
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