2N5415 Datasheet, PDF (2/4 Pages) NXP Semiconductors – PNP high-voltage transistors

PNP SILICON HIGH VOLTAGE TRANSISTOR
2N 5415, 16
TO-39
Metal Can Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
Transition Frequency
Output Capacitance
Input Capacitance
| h_fe |
f_T
C_ob
C_ib
I_C=5mA, V_CE=10V,
f=1kHz
I_C=10mA, V_CE=10V
f=5MHz
V_CB=10V, I_E=0, f=1MHz
V_EB=V_EBOmax, I_C=0,
f=1MHz
*Pulse Test: Pulse Width <300µs, Duty Cycle <2%
2N5415/16
>25
>15
<15
<75
UNITS
MHz
pF
pF
Continental Device India Limited
Data Sheet
Page 2 of 4