2N5415 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP high-voltage transistors

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON HIGH VOLTAGE TRANSISTOR
2N 5415, 16
TO-39
Metal Can Package
High Speed Switching and Linear amplifier Appliances in Military,
Industrial and Commercial Equipment.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
2N5415
2N5416
Collector Emitter Voltage
V_CEO
200
300
Collector Base Voltage
V_CBO
200
350
Emitter Base Voltage
V_EBO
4
6
Collector Current Continuous
I_C
(--------------------1------------------)
Base Current Continuous
I_B
(-----------------0.5------------------)
Power Dissipation @ Ta=50ºC
P_D
(--------------------1------------------)
Derate Above 25ºC
Power Dissipation@ Tc=25ºC
P_D
(------------------10-------------------
Derate Above 25ºC
Junction Temperature
Tj
(--------------------200-----------------
Operating And Storage Junction
T_stg
-65 to +200
Temperature Range
UNITS
V
V
V
A
A
W
mW/ºC
W
mW/ºC
ºC
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
R_th(j-a)
R_th(j-c)
150
ºC/W
17.5
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Breakdown Voltage BV_CEO(sus)*
I_C=50mA,I_B=0
Collector Cut off Current
I_CBO
V_CB=175V, I_E=0
V_CB=280V, I_E=0
Collector Cutoff Current
I_CEO
V_CE=150V, I_B=0
V_CE=250V, I_B=0
Emitter Cut off Current
I_EBO
V_EB=4V, I_C=0
V_EB=6V, I_C=0
2N5415
>200
<50
<50
<20
2N5416
>300
<50
<50
<20
UNITS
V
µA
µA
µA
µA
µA
µA
Collector Emitter Saturation Voltage
V_CE(Sat)
I_C=50mA,I_B=5mA
<2.5
<2
V
Base Emitter Saturation Voltage
DC Current Gain
V_BE(Sat)
h_FE*
I_C=50mA,I_B=5mA
<1.5 <1.5
V
I_C=50mA,V_CE=10V
30-150 30-120
Continental Device India Limited
Data Sheet
Page 1 of 4