2N5191 Datasheet, PDF (2/4 Pages) ON Semiconductor – POWER TRANSISTORS SILICON NPN

NPN EPITAXIAL SILICON POWER TRANSISTORS
2N5191
2N5192
TO126
Plastic Package
ECB
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
DC Current Gain
h_{FE *} I_C=1.5A, V_CE=2V
2N5191 25
2N5192 20
I_C=4A, V_CE=2V
2N5191 10
2N5192 7
Transition frequency
f_T
I_C=1A, V_CE=10V
2
*Pulsed Pulse Duration=300µs, Duty Cycle=1.5%
TYP MAX UNIT
-
100
-
80
-
-
-
-
-
-
MHz
Continental Device India Limited
Data Sheet
Page 2 of 4