2N5191 Datasheet, PDF (1/4 Pages) ON Semiconductor – POWER TRANSISTORS SILICON NPN

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL SILICON POWER TRANSISTORS
2N5191
2N5192
TO126
Plastic Package
ECB
Use in Medium Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Peak Current
Base Current
Total Dissipation @ T_C<25 ºC
Junction Temperature
Storage Temperature Range
Thermal Resistance
Junction to Case
Junction to Ambient
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
P_tot
T_j
T_stg
Rth(j-c)
Rth(j-a)
2N5191
2N5192
60
80
60
80
5
4
7
1
40
150
-65 to 150
3.12
100
UNIT
V
V
V
A
A
A
W
ºC
ºC
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Emitter Sustaining Voltage
V_CEO*(sus) I_C=100mA, I_B=0
2N5191 60
2N5192 80
Collector Cut off Current
I_CBO V_CB=rated V_CBO, I_E=0
-
I_CEX V_CE=rated V_CEO,
-
VBE=1.5V
Emitter Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Voltage
V_CE=rated V_CEO,
-
V_BE=1.5V,T_C=125 ºC
I_CEO V_CE=rated V_CEO, I_B=0
-
I_EBO V_EB=5V, I_C=0
-
V_CE(sat)* I_C=1.5A, I_B=0.15A
-
I_C=4A, I_B=1A
-
V_BE* I_C=1.5A, V_CE=2V
-
TYP MAX UNIT
-
-
V
-
-
V
-
0.1 mA
-
0.1 mA
-
2
mA
-
1
mA
-
1
mA
-
0.6
V
-
1.4
V
-
1.2
V
Continental Device India Limited
Data Sheet
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